The Samsung Galaxy S23 FE is set to be released in the third quarter of this year as part of the Galaxy S23 series. However, it appears that the device will come with different chipsets depending on the market.
According to Geekbench runs and official support pages, the global variant of the Galaxy S23 FE will feature the Exynos 2200 chipset built on a 4nm process, along with 8GB of RAM. This chipset, which is the same as the one found in the Galaxy S22 Ultra, has received criticism for being less energy-efficient compared to its Qualcomm counterpart. This inefficiency was attributed to Samsung’s 4nm manufacturing process, which was reported to be less efficient than TSMC’s 4nm process.
On the other hand, the US version of the Galaxy S23 FE will be powered by the Snapdragon 8 Gen 1 chipset manufactured by TSMC using a 4nm node. It will also come with 8GB of RAM. Qualcomm’s chipsets are generally regarded as the preferred choice, to the extent that Samsung even unveiled a Snapdragon 888-powered Galaxy S21 FE in India recently.
Aside from the chipset differences, both global and US variants of the Galaxy S23 FE are expected to feature a 6.4-inch 120Hz AMOLED display, a 4,500mAh battery with 25W charging support, and a 50MP main camera
